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APT60M75JLL
600V 58A 0.075
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT60M75JLL UNIT Volts Amps
600 58 232 30 40 595 4.76 -55 to 150 300 58 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.075 100 500 100 3 5
(VGS = 10V, ID = 29A)
Ohms A nA Volts
9-2004 050-7099 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT60M75JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 58A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 58A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 58A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 58A, RG = 5
MIN
TYP
MAX
UNIT
8930 1130 50 195 48 100 23 15 55 10 1205 1385 1865 1550
MIN TYP MAX UNIT Amps Volts ns C V/ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
58 232 1.3 857 26 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -58A)
Reverse Recovery Time (IS = -58A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -58A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.90mH, RG = 25, Peak IL = 58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID58A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.15
0.7 0.5 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
9-2004
0.10 0.3 0.05 0.1 0.05
050-7099 Rev B
Z
JC
0
10-5
SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
200 180 160 140 120 100 80 60 40 20 0
APT60M75JLL
VGS =15 &10V 8V 7.5V 7V 6.5
0.0492
0.0273F
Power (watts)
0.142
0.469F
6V
0.0189 Case temperature. (C)
44.2F
5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V NORMALIZED TO = 10V @ I = 29A
D
180 160
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55C TJ = +25C TJ = +125C
1.30 1.20 1.10 1.00 0.90 0.80
GS
VGS=10V VGS=20V
0
60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 29A = 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
1.1 1.0 0.9 0.8 0.7 0.6 -50
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7099 Rev B
9-2004
232
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT60M75JLL
Ciss
ID, DRAIN CURRENT (AMPERES)
100
C, CAPACITANCE (pF)
50
100S
1,000
Coss
10
1mS 10mS
100
Crss
1
TC =+25C TJ =+150C SINGLE PULSE
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 58A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C
10
12
VDS= 120V VDS= 300V
8
VDS= 480V
10
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off)
V
DD G
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 180 160 140 120
V
DD G
= 400V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
= 400V
tr and tf (ns)
100 80 60 40 20 0
R
= 5
T = 125C
J
100 80 60 40 20
tf
L = 100H
tr
td(on)
10
70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
30
50
70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 6000
V I
DD
0
10
30
50
5000
= 400V
= 400V
R
= 5
L = 100H EON includes diode reverse recovery
SWITCHING ENERGY (J)
4000
Eon and Eoff (J)
T = 125C
J
5000 4000 3000 2000 1000 0
D J
= 58A
T = 125C L = 100H EON includes diode reverse recovery
Eoff
3000
Eoff
2000 Eon 1000
Eon
050-7099 Rev B
9-2004
0
70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT60M75JLL
90% 10% Gate Voltage TJ125C TJ125C
td(off) td(on)
90% Drain Current 90%
Gate Voltage Drain Voltage
tr
tf
10% 10% 5% Drain Voltage Switching Energy 0 Drain Current
5%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7099 Rev B
9-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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